k i semiconductor audio frequency amplifier high frequency osc absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test conditions i cbo collector cut - off current 100 na v cb =60v, i e =0 i ebo emitter cut - off current 100 na v eb =5v, i c =0 h fe (1) dc current gain 70 700 v ce =6v, i c =2m a h fe (2) 25 v ce =6v, i c = 150 m a v ce(sat) collector - emitter saturation voltage 250 mv i c = 1 00ma, i b = 1 0ma v be(sat) base - emitter saturation volt age 1.0 v i c =100ma, i b =10ma bv cbo collector - base breakdown voltage 60 v i c = 100 a, i e =0 bv ceo collector - emitter breakdown voltage 50 v i c =1ma, i b =0 bv ebo emitter - base breakdown voltage 5 v i e =100 a i c =0 f t current gain - bandwidth product 80 mhz v ce =10v, i c =1m a fe classification o y gr bl 7 0 1 40 120 240 2 00 400 350 700 t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation 400mw v cbo collector - base voltage 60v v ceo collector - emitter voltage 50v v ebo emitter - base voltage 5v i c collector current 150ma 1 D emitter e 2 D collector c 3 D base b to - 92 c 1815 n p n s i l i c o n t r a n s i s t o r
k i semiconductor c 1815 n p n s i l i c o n t r a n s i s t o r
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